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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

Name: Ultra Fast IGBT Transistor N Channel Insulated Gate Bipolar Transistor With Built In Diode
Brand: ON/Fairchild
Price: 1 USD

Quality Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode for sale

Brand Name : ON/Fairchild

Model Number : G40N60UFD

Certification : ROHS

Place of Origin : Original Factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union，Paypal

Supply Ability : 100000pcs

Delivery Time : 1-3Days

Packaging Details : BOX

Series : G40N60UFD

Application : general inverters

Package : TO-3P

name : IGBT Transistor

Features : High speed switching

certified : ROHS

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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P

Descriptions:

Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Features :

• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.).

Applications :

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

Product Tags:

insulated gate bipolar transistor

high speed switching diode

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode Images

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